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The evolution of mobile networks toward ubiquitous connectivity envisioned by International Mobile Telecommunications-2030 has caused a surge in control plane traffic. A deep understanding of the control plane’s internal characteristics and mechanisms is crucial for delivering optimal services. However, existing measurements often neglect the control plane or treat it as an opaque box, focusing on overall performance instead of its intrinsic characteristics. In this paper, we introduce a 3GPP-compliant control plane evaluation framework and conduct the first in-depth analysis of the characteristics and overheads exhibited by various network functions (NFs) under large-scale connectivity conditions, based on empirical measurements. We selected three core network systems and conducted performance measurements on 500,000 User Equipment during UE registration and PDU session establishment procedures. We reveal the substantial resource demands and limited scalability of the Access and Mobility Management Function (AMF) and the Network Repository Function (NRF). Furthermore, our analysis identifies a significant need for an enhanced state management mechanism. The insights derived from our measurements underscore the immense potential for optimization within the core network. Key optimization pathways include enhancing protocol stack processing, mitigating potential leverage-based attacks, and implementing an integrated state management framework. 

Doping organic semiconductors has become a key technology to increase the performance of organic light-emitting diodes, solar cells, or field-effect transistors (OFETs). However, doping can be used not only to optimize these devices but also to enable new design principles as well. Here, a novel type of OFET is reported—the vertical organic tunnel field-effect transistor. Based on heterogeneously doped drain and source contacts, charge carriers are injected from an n-doped source electrode into the channel by Zener tunneling and are transported toward a p-doped drain electrode. The working mechanism of these transistors is discussed with the help of a tunnel model that takes energetic broadening of transport states in organic semiconductors and roughness of organic layers into account. The proposed device principle opens new ways to optimize OFETs. It is shown that the Zener junction included between the source and drain of the vertical organic tunnel field-effect transistors suppresses short channel effects and improves the saturation of vertical OFETs. 

Organic electrochemical transistors (OECTs) are becoming a key device in the field of organic bioelectronics. For many applications of OECTs, in particular for enzymatic sensing, a complex mixture of room temperature ionic liquids (RTILs) combined with other electrolytes is used as a gate electrolyte, making the interpretation of experimental trends challenging. Here, the switching mechanism of OECTs using such RTILs is studied. It shows that ions smaller in size than the ions contained in the RTIL (e.g., Na+) have to be added to the ionic liquid to ensure switching of the OECTs. Furthermore, it is shown that OECTs based on RTILs exhibit noticeable gate‐bias stress effects and a hysteresis in the electrical transfer characteristics. A model based on incomplete charging/discharging of the effective gate capacitance during operation of the OECT and a dispersion in the ion mobilities is proposed to explain these instabilities, and thus it shows that the hysteresis can be minimized by optimizing the geometry of the device. Overall, a better understanding of the underlying mechanisms of switching and stability of OECTs based on RTILs is the first step toward various applications such as lactate acid sensors and neurotransmitter recording. 

Research in Organic Permeable Base Transistors (OPBTs) has led to a significant increase in their performance. However, despite this progress, understanding of the working mechanism of OPBTs is still limited. Although first numerical models of OPBTs are able to describe the switching mechanism of OPBTs correctly, they neglect currents injected at the base electrode, which leads to unrealistically low off-currents and high ON/OFF ratios. Here, a tunneling model is developed that is capable of describing injection of charges through a thin oxide layer formed around the base electrode of OPBTs. With the help of this injection model, the performance of the base-collector diode of OPBTs is discussed. In particular, the model is used to explain the reduction in backward currents due to an exposure to ambient air by an increase in the thickness of the oxide layer. Furthermore, the tunnel model is used to show that the reduction in backward currents of the base-collector diode leads to a decrease in off-currents of complete OPBTs, which in turn leads to an increase in their ON/OFF ratio. 

Abstract Organic doping is widely used for defining the majority charge carriers of organic thin films, tuning the Fermi level, and improving and stabilizing the performance of organic light‐emitting diodes and organic solar cells. However, in contrast to inorganic semiconductors, the doping concentrations commonly used are quite high (in the wt% range). Such high concentrations not only limit the scope of doping in organic field‐effect transistors (OFETs), but also limit the doping process itself resulting in a low doping efficiency. Here, the mechanism of doping at ultralow doping concentrations is studied. Doped C₆₀metal‐oxide‐semiconductor (MOS) junctions are used to study doping at the 100 ppm level. With the help of a small‐signal drift‐diffusion model, it is possible to disentangle effects of traps at the gate dielectric/organic semiconductor interface from effects of doping and to determine the doping efficiency and activation energy of the doping process. Doped C₆₀OFETs with an ultralow operation voltage of 800 mV and an excellent on/off ratio of up to 10⁷are realized. The devices have low subthreshold swing in the range of 80 mV dec⁻¹and a large transconductance of up to 8 mS mm⁻¹.